Synergy of experiment and model for reactive HiPIMS: effect of discharge parameters on WOx composition and deposition rate

被引:11
作者
Rezek, J. [1 ,2 ]
Kozak, T. [1 ,2 ]
Kumar, N. [1 ,2 ]
Haviar, S. [1 ,2 ]
机构
[1] Univ West Bohemia, Dept Phys, European Ctr Excellence, Univ 8, Plzen 30614, Czech Republic
[2] Univ West Bohemia, NTIS, European Ctr Excellence, Univ 8, Plzen 30614, Czech Republic
关键词
reactive HiPIMS model; deposition rate; tungsten oxide; THIN-FILMS; MAGNETRON;
D O I
10.1088/1361-6463/abd1a3
中图分类号
O59 [应用物理学];
学科分类号
摘要
Reactive high-power impulse magnetron sputtering of tungsten oxide films using metallic tungsten target (72 mm in diameter) in argon-oxygen atmosphere (total pressure of 0.75 Pa) was carried out. The effect of various discharge parameters on the deposition rate and film oxygen concentration was investigated. Moreover, a model combining a reactive high-power impulse magnetron sputtering model and a discharge plasma model for the ionization region was successfully used for deeper insight into the effect of particular discharge parameters such as voltage pulse length (from 100 -800 mu s), oxygen partial pressure (from 0.25-0.50 Pa) or the value of pulse-averaged target power density (from 2.5-500 W cm(-2)). The results of the presented model, most notably trends in the target- and substrate oxide fraction, composition of particle fluxes onto the substrate, degree of W atom ionization or degree of O-2 molecule dissociation are discussed and put into context with experimentally measured quantities.
引用
收藏
页数:11
相关论文
共 49 条
[1]   High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering [J].
Anders, Andre ;
Andersson, Joakim ;
Ehiasarian, Arutiun .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)
[2]   Deposition rates of high power impulse magnetron sputtering: Physics and economics [J].
Anders, Andre .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (04) :783-790
[3]  
Behrish R., 1983, Sputtering by Particle Bombardment II, DOI [10.1007/3-540-12593-0, DOI 10.1007/3-540-12593-0]
[4]   Structure and properties of Hf-O-N films prepared by high-rate reactive HiPIMS with smoothly controlled composition [J].
Belosludtsev, A. ;
Houska, J. ;
Vlcek, J. ;
Haviar, S. ;
Cerstvy, R. ;
Rezek, J. ;
Kettner, M. .
CERAMICS INTERNATIONAL, 2017, 43 (07) :5661-5667
[5]   Fundamental understanding and modeling of reactive sputtering processes [J].
Berg, S ;
Nyberg, T .
THIN SOLID FILMS, 2005, 476 (02) :215-230
[6]   MODELING OF REACTIVE SPUTTERING OF COMPOUND MATERIALS [J].
BERG, S ;
BLOM, HO ;
LARSSON, T ;
NENDER, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (02) :202-207
[7]   Electron scattering cross section data for tungsten and beryllium atoms from 0.1 to 5000eV [J].
Blanco, F. ;
Ferreira da Silva, F. ;
Limao-Vieira, P. ;
Garcia, G. .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2017, 26 (08)
[8]   The behaviour of negative oxygen ions in the afterglow of a reactive HiPIMS discharge [J].
Bowes, M. ;
Bradley, J. W. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (26)
[9]   Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Experiment [J].
Capek, Jiri ;
Kadlec, Stanislav .
JOURNAL OF APPLIED PHYSICS, 2017, 121 (17)
[10]   Towards a more complete model for reactive magnetron sputtering [J].
Depla, D. ;
Heirwegh, S. ;
Mahieu, S. ;
De Gryse, R. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (07) :1957-1965