Monte Carlo simulation of epitaxial growth on a (111) layer with mismatch

被引:4
作者
Tan, S
Ghazali, A
Levy, JCS
机构
[1] UNIV PARIS 07,GPS,URA 17 CNRS,F-75251 PARIS 05,FRANCE
[2] UNIV PARIS 06,F-75251 PARIS 05,FRANCE
[3] UNIV PARIS 07,LMS,F-75251 PARIS 05,FRANCE
关键词
chemisorption; computer simulations; construction and use of effective interatomic interactions; epitaxy; growth; low index single crystal surfaces; metal-metal nonmagnetic heterostructures; single crystal epitaxy; surface structure; morphology; roughness; and topography;
D O I
10.1016/S0039-6028(96)01533-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A high-temperature deposition of adatoms on a substrate with or without lattice mismatch from -10% to +10%, followed by slow cooling to a given temperature, is simulated by means of a Monte Carlo algorithm with Lennard-Jones interatomic pair potentials. Stranski-Krastanov growth is always observed with a lateral island size controlled by the lattice mismatch, while the deposition mode acts strongly on the island slope. Complete healing of the island structure never occurs before the tenth layer. The interlayer distance undergoes oscillations as a function of the layer number. This is observed for a +/-10% mismatch as well as for a -5% mismatch.
引用
收藏
页码:997 / 1000
页数:4
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