18nm FDSOI Enhanced Device Platform for ULP/ULL MCUs

被引：9

作者：

Weber, Olivier ^{[1
]}

Min, Doohong ^{[2
]}

Villaret, Alexandre ^{[1
]}

Park, Jinha ^{[2
]}

Lee, Ilmin ^{[2
]}

Vandenbossche, Eric ^{[1
]}

Kim, Dohun ^{[2
]}

Yun, Jiyoung ^{[2
]}

Park, Jinwoo ^{[2
]}

Lee, Minuk ^{[2
]}

Kang, Jinseok ^{[2
]}

Lee, Hyunjong ^{[2
]}

Choi, Youngju ^{[2
]}

Kim, Inhwan ^{[2
]}

Kim, Joochan ^{[2
]}

Janardan, Dhori Kedar ^{[1
]}

Haendler, Sebastien ^{[1
]}

Elghouli, Salim ^{[1
]}

Puget, Sophie ^{[1
]}

Bernicot, Christophe ^{[1
]}

Bernard, Emilie ^{[1
]}

Wacquant, Francois ^{[1
]}

Nimsgern, Fabien ^{[1
]}

Choi, Joonhyuk ^{[2
]}

Maeda, Shigenobu ^{[2
]}

Lee, Jongho ^{[2
]}

Arnaud, Franck ^{[1
]}

机构：

[1] STMicroelect, 850 Rrue Jean Monnet, F-38926 Crolles, France

[2] Samsung Elect Co Ltd, Foundry Div, 1 Samsung Ro, Yongin, Gyeonggi Do, South Korea

来源：

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM | 2022年

关键词：

D O I：

10.1109/IEDM45625.2022.10019397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We successfully developed new devices and new features in the 18nm FDSOI technology for addressing the low power and the low leakage demands of Micro-Controller Units (MCUs). In a quadruple fully mixable Vt offer, 80% speed enhancement and 2x leakage reduction are demonstrated at 0.6V V-dd vs the fastest and vs the less-leaky 28nm FDSOI devices, respectively. Low leakage device options have been built for all device families of this Triple Gate Oxide (TGO) platform (i.e thin: SG - medium: EG - thick: eZG), achieving 10pA/mu m for SG/EG transistors and 1pA/mu m Idoff for 3.3V eZG ones without adding any mask nor process cost. For SRAM, the high-density 0.102 mu m(2) SRAM bitcell has been carefully optimized and, in addition, an innovative Zero-power 0.532 mu m(2) SRAM (ZpSRAM) is proposed for the first time. As a result, record-low retention leakage of 0.6pA/cell and 30fA/cell are reported respectively for those two bitcells, completing the list of benefits brought to the 18nm FDSOI device suite to fulfill ULP/ULL design requirements.

引用

页数：4

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