Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

被引：41

作者：

Akturk, A. ^{[1
]}

McGarrity, J. M. ^{[1
]}

Goldsman, N. ^{[1
]}

Lichtenwalner, D. ^{[2
]}

Hull, B. ^{[2
]}

Grider, D. ^{[2
]}

Wilkins, R. ^{[3
]}

机构：

[1] CoolCAD Elect LLC, College Pk, MD 20740 USA

[2] Cree Co, Wolfspeed, Durham, NC 27709 USA

[3] Prairie View A&M Univ, Dept Elect & Comp Engn, Prairie View, TX 77446 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 06期

关键词：

Failure in time; power devices; reliability; silicon carbide; terrestrial neutrons; SINGLE-EVENT BURNOUT; HIGH-ENERGY NEUTRONS; SEMICONDUCTOR-DEVICES; TEMPERATURE; DEPENDENCE; IMPACT;

D O I：

10.1109/TNS.2018.2833741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Investigations of terrestrial neutron radiationinduced failures in silicon carbide power MOSFETs and diodes indicate that the failures are related to a hole-initiated impact ionization process followed by a thermal transient resulting in the loss of device voltage blocking ability due to the damage of lattice along a filament within the device volume. Irrespective of device type, MOSFET or diode, the start of these failures exhibits the same characteristics, and can be mitigated by decrease in field in device OFF state. These failures with origins in impact ionization and fast thermal transients are fundamentally different from those of bipolar burn-out events, observed in silicon power devices. In addition, once a failure event starts, the failure ends with all terminals shorting.

引用

页码：1248 / 1254

页数：7

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