Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

被引：4
作者：
Arita, M [1 ]
Konishi, H [1 ]
Masuda, M [1 ]
Hayashi, Y [1 ]
机构：
[1] Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Fukuoka 8128581, Japan
来源：
MATERIALS TRANSACTIONS | 2002年 / 43卷 / 11期
关键词：
germanium oxide; tin oxide; thin film; visible light transparency; electrical conductivity; protium introduction; hydrogen ion implantation;
D O I：
10.2320/matertrans.43.2670
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge less than or equal to 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge greater than or equal to 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introduction.
引用
收藏
页码：2670 / 2672
页数：3
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