Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

被引：13

作者：

Gelczuk, L. ^{[1
]}

Dabrowska-Szata, M. ^{[1
]}

Jozwiak, G. ^{[1
]}

Radziewicz, D. ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 388卷 / 1-2期

关键词：

electronic states; dislocations; deep levels; DLTS; indium gallium arsenide;

D O I：

10.1016/j.physb.2006.05.426

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electronic properties of strain-induced dislocations in partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch have been studied by means of deep-level transient spectroscopy (DLTS). DLTS investigations carried out with Schottky contacts revealed one deep electron trap, at about E-C-0.57 eV. The trap has been attributed to electron states associated with a misfit dislocations lying at the interface between the epilayer and the substrate. Thorough studies including DLTS-line shape, DLTS-line behaviour analysis as well as capture kinetics and deep profile measurements made possible to specify the type of electronic states associated with dislocations. We relate the electron trap to "localized" states at misfit dislocations. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：195 / 199

页数：5

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