A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy

被引:182
作者
Feng, Xuewei [1 ,2 ]
Li, Yida [1 ,2 ]
Wang, Lin [1 ,2 ]
Chen, Shuai [3 ]
Yu, Zhi Gen [3 ]
Tan, Wee Chong [1 ,2 ]
Macadam, Nasiruddin [4 ]
Hu, Guohua [4 ]
Huang, Li [1 ,2 ]
Chen, Li [1 ,2 ]
Gong, Xiao [1 ,2 ]
Chi, Dongzhi [5 ]
Hasan, Tawfique [4 ]
Thean, Aaron Voon-Yew [1 ,2 ]
Zhang, Yong-Wei [3 ]
Ang, Koh-Wee [1 ,2 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore
[2] Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore
[3] ASTAR, Inst High Performance Comp, 1 Fusionopolis Way, Singapore 138632, Singapore
[4] Univ Cambridge, Cambridge Graphene Ctr, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
[5] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore
来源
ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 12期
基金
新加坡国家研究基金会; 英国工程与自然科学研究理事会;
关键词
artificial synapse; ink formulation; memristor; molybdenum disulfide; printing; RESISTIVE MEMORY; DEVICES; NETWORKS; ARRAYS; THIN; INKS;
D O I
10.1002/aelm.201900740
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward "system-on-plastics". Recent advancements in printing techniques show enormous potential to overcome the major challenges of the current manufacturing processes that require high temperature and planar topography, which may radically change the system integration approach on flexible substrates. However, fully printed memristors are yet to be successfully demonstrated due to the lack of a robust printable switching medium and a reliable printing process. An aerosol-jet-printed Ag/MoS2/Ag memristor is realized in a cross-bar structure by developing a scalable and low temperature printing technique utilizing a functional molybdenum disulfide (MoS2) ink platform. The fully printed devices exhibit an ultra-low switching voltage (0.18 V), a high switching ratio (10(7)), a wide range of tuneable resistance states (10-10(10) omega) for multi-bit data storage, and a low standby power consumption of 1 fW and a switching energy of 4.5 fJ per transition set. Moreover, the MoS2 memristor exhibits both volatile and non-volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short-term and long-term plasticity of biological synapses, demonstrating its potential to enable energy-efficient artificial neuromorphic computing.
引用
收藏
页数:9
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