AN INDUSTRIAL TEMPERATURE PROBE BASED ON SiC DIODES

被引：0

作者：

Draghici, F. ^{[1
,3
]}

Badila, M. ^{[2
]}

Brezeanu, G. ^{[1
]}

Rusu, I. ^{[1
]}

Craciunoiu, F. ^{[3
]}

Enache, I. ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Bucharest, Romania

[2] ON Semicond Corp, Santa Clara, CA 95054 USA

[3] IMT Bucharest, Bucharest, Romania

来源：

2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2 | 2010年

关键词：

high temperature sensors; silicon carbide (SiC); industrial environment;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4-20mA output current for ambient to maximum (400 degrees C) input temperature was designed and tested.

引用

页码：409 / 412

页数：4