Processes in N-channel Mosfets during postirradiation thermal annealing

被引：6

作者：

Pejovic, M ^{[1
]}

Jaksic, A ^{[1
]}

Ristic, G ^{[1
]}

Baljosevic, B ^{[1
]}

机构：

[1] FAC NAT SCI, YU-38000 PRISHTINA, YUGOSLAVIA

来源：

RADIATION PHYSICS AND CHEMISTRY | 1997年 / 49卷 / 05期

关键词：

D O I：

10.1016/S0969-806X(96)00181-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The processes during postirradiation thermal annealing of gamma-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so called ''latent'' interface trap buildup is observed, followed at very late annealing, times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (C) 1997 Elsevier Science Ltd.

引用

页码：521 / 525

页数：5

共 26 条

[1] THERMAL ANNEALING OF RADIATION-INDUCED DEFECTS - A DIFFUSION-LIMITED PROCESS
BROWN, DB
MA, DI
DOZIER, CM
PECKERAR, MC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4059 - 4063
[2] PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI/SIO2 INTERFACE BY ATOMIC-HYDROGEN
CARTIER, E
STATHIS, JH
BUCHANAN, DA
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1510 - 1512
[3] THE ROLE OF BORDER TRAPS IN MOS HIGH-TEMPERATURE POSTIRRADIATION ANNEALING RESPONSE
FLEETWOOD, DM
SHANEYFELT, MR
RIEWE, LC
WINOKUR, PS
REBER, RA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) : 1323 - 1334
[4] ACCOUNTING FOR TIME-DEPENDENT EFFECTS ON CMOS TOTAL-DOSE RESPONSE IN-SPACE ENVIRONMENTS
FLEETWOOD, DM
WINOKUR, PS
BARNES, CE
SHAW, DC
[J]. RADIATION PHYSICS AND CHEMISTRY, 1994, 43 (1-2) : 129 - 138
[5] Griscom D. L., 1988, PHYSICS CHEM SIO2 SI, P287
[6] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES
GRISCOM, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533
[7] REBOUND EFFECT IN POWER VDMOSFETS DUE TO LATENT INTERFACE-TRAP GENERATION
JAKSIC, A
RISTIC, G
PEJOVIC, M
[J]. ELECTRONICS LETTERS, 1995, 31 (14) : 1198 - 1199
[8] APPLICATION OF TEST METHOD 1019.4 TO NONHARDENED POWER MOSFETS
KHOSROPOUR, P
GALLOWAY, KF
ZUPAC, D
SCHRIMPF, RD
CALVEL, P
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (03) : 555 - 560
[9] EVALUATION OF A METHOD FOR ESTIMATING LOW-DOSE-RATE IRRADIATION RESPONSE OF MOSFETS
KHOSROPOUR, P
FLEETWOOD, DM
GALLOWAY, KF
SCHRIMPF, RD
CALVEL, P
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 2560 - 2566
[10] KHOSROPOUR P, 1993, RADECS, P300

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