A Nitride-Based P-Channel Logic-Compatible One-Time-Programmable Cell With a New Contact Select Gate

被引：9
作者：
Tsai, Yi-Hung [1 ]
Lin, Kai-Chun [1 ]
Kuo, Cheng-Hsiung [2 ]
Chih, Yue-Der [2 ]
Lin, Chrong-Jung [1 ]
King, Ya-Chin [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Taiwan Semicond Mfg Co Ltd, Non Volatile Memory Lib Dept, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 10期
关键词：
Logic-NVM; one-time programmable (OTP); p-channel; 2-bit/cell; CMOS; RETENTION; CHARGE;
D O I：
10.1109/LED.2009.2028442
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a new 2-bit/cell contact-gated one-time-programmable (OTP) device, which is demonstrated in a 90-nm CMOS logic process. The cell is programmed by electron injection and storage in the contact-etch-stop-layer (CESL) nitride film. A novel contact gate is introduced to serve as a select transistor, which allows the cell to exhibit good immunity against program and read disturbances. The 2-bit/cell operation is achieved by selectively injecting charges into the CESL on either side of the contact gate through channel-hot-electron operation. With a unit bit area of 13.8 F-2, this nitride-based contact-gated OTP memory is highly feasible for advanced logic applications.
引用
收藏
页码：1090 / 1092
页数：3
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