Enhanced thermoelectric property in superionic conductor Bi-doped Cu1.8S

被引:31
作者
Liang, Dou-Dou [1 ]
Ge, Zhen-Hua [1 ,2 ]
Li, He-Zhang [1 ]
Zhang, Bo-Ping [1 ]
Li, Fu [3 ,4 ,5 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
[2] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Peoples R China
[3] Tsinghua Univ, Grad Sch Shenzhen, Adv Mat Inst, Shenzhen 518055, Peoples R China
[4] Shenzhen Univ, Sch Phys & Energy, Shenzhen 518060, Peoples R China
[5] Shenzhen Univ, Shenzhen Key Lab Sensor Technol, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
Cu1.8S; Bi3+ doping; Superionic; Thermoelectric; PERFORMANCE BULK THERMOELECTRICS; THIN-FILMS; TEMPERATURE; FIGURE; MERIT;
D O I
10.1016/j.jallcom.2017.02.295
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the effect of Bi3+ doping on both electron and phonon transport properties of BixCu1.8-xS (x = 0, 0.004, 0.01, 0.014, 0.02) superionic conductors. An enhanced ZT value in different degrees with x is mainly attributed to an improved electrical conductivity owing to an increased carrier mobility with an undegrated Seebeck coefficient when 0 <= x <= 0.01, and a reduced thermal conductivity to a low level (0.71-1.00 Wm(-1)K(-1)) at x = 0.02 benefiting by the formation of the low-conductive Cu3BiS3 and Cu1.96S second phases. The highest ZT value of 0.61 at 673 K obtained for the Bi0.01Cu1.79S (x = 0.01) sample, which is twice as large as that of the pure Cu1.8S sample. Our result indicates that the introduction of Bi3+ in thermoelectric materials is an effective and convenient strategy to improve ZT by improving the power factor and/or decreasing thermal conductivity. (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码:169 / 174
页数:6
相关论文
共 40 条
[1]   Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals [J].
Anh Tuan Duong ;
Van Quang Nguyen ;
Duvjir, Ganbat ;
Van Thiet Duong ;
Kwon, Suyong ;
Song, Jae Yong ;
Lee, Jae Ki ;
Lee, Ji Eun ;
Park, SuDong ;
Min, Taewon ;
Lee, Jaekwang ;
Kim, Jungdae ;
Cho, Sunglae .
NATURE COMMUNICATIONS, 2016, 7
[2]   High-performance bulk thermoelectrics with all-scale hierarchical architectures [J].
Biswas, Kanishka ;
He, Jiaqing ;
Blum, Ivan D. ;
Wu, Chun-I ;
Hogan, Timothy P. ;
Seidman, David N. ;
Dravid, Vinayak P. ;
Kanatzidis, Mercouri G. .
NATURE, 2012, 489 (7416) :414-418
[3]   SUPERIONIC CONDUCTORS - TRANSITIONS, STRUCTURES, DYNAMICS [J].
BOYCE, JB ;
HUBERMAN, BA .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1979, 51 (04) :189-265
[4]  
DONNAY G, 1958, AM MINERAL, V43, P228
[5]   Semiconducting Cu3BiS3 thin films formed by the solid-state reaction of CuS and bismuth thin films [J].
Estrella, V ;
Nair, MTS ;
Nair, PK .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) :190-194
[6]   High Band Degeneracy Contributes to High Thermoelectric Performance in p-Type Half-Heusler Compounds [J].
Fu, Chenguang ;
Zhu, Tiejun ;
Pei, Yanzhong ;
Xie, Hanhui ;
Wang, Heng ;
Snyder, G. Jeffrey ;
Liu, Yong ;
Liu, Yintu ;
Zhao, Xinbing .
ADVANCED ENERGY MATERIALS, 2014, 4 (18)
[7]   High-Performance Thermoelectricity in Nanostructured Earth-Abundant Copper Sulfides Bulk Materials [J].
Ge, Zhen-Hua ;
Liu, Xiaoye ;
Feng, Dan ;
Lin, Jingyang ;
He, Jiaqing .
ADVANCED ENERGY MATERIALS, 2016, 6 (16)
[8]   Effect of spark plasma sintering temperature on thermoelectric properties of Bi2S3 polycrystal [J].
Ge, Zhen-Hua ;
Zhang, Bo-Ping ;
Yu, Zhao-Xin ;
Li, Jing-Feng .
JOURNAL OF MATERIALS RESEARCH, 2011, 26 (21) :2711-2718
[9]   Synthesis and transport property of Cu1.8S as a promising thermoelectric compound [J].
Ge, Zhen-Hua ;
Zhang, Bo-Ping ;
Chen, Yue-Xing ;
Yu, Zhao-Xin ;
Liu, Yong ;
Li, Jing-Feng .
CHEMICAL COMMUNICATIONS, 2011, 47 (47) :12697-12699
[10]   The effect of order-disorder phase transitions and band gap evolution on the thermoelectric properties of AgCuS nanocrystals [J].
Guin, Satya N. ;
Sanyal, Dirtha ;
Biswas, Kanishka .
CHEMICAL SCIENCE, 2016, 7 (01) :534-543