Coupled substitutions in In2O3:: New transparent conductors In2-xM2x/3Sbx/3O3 (M = Cu, Zn)

被引：8

作者：

Bizo, L. ^{[1
]}

Choisnet, J. ^{[1
]}

Raveau, B. ^{[1
]}

机构：

[1] ENSICAEN, Lab CRISMAT, CNRS, UMR 6508, F-14050 Caen 4, France

来源：

MATERIALS RESEARCH BULLETIN | 2006年 / 41卷 / 12期

关键词：

oxides; semiconductors; electrical properties; optical properties;

D O I：

10.1016/j.materresbull.2006.04.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two solid solutions In2-xM2x/3Sbx/3O3 (M = Cu, Zn) with the bixbyite structure have been synthesized in air at 1300 degrees C. The homogeneity range is larger for Zn (x = 0.42) than for Cu (x = 0.20) and the cationic, distribution of the Cu/Sb and Zn/Sb couples is weakly ordered. These new oxides appear to be transparent conductors. Even fully deprived of tin, they have good potential properties. These oxides are either semiconductors with a small band gap (Cu/Sb) or semimetals (Zn/Sb) with sigma = 3 X 10(2) (ohm cm)(-1) at room temperature. These materials are more efficient than bulk ITO prepared under the same experimental conditions, i.e. without reducing treatment (sigma = 50 (ohm cm)(-1)). (C) 2006 Elsevier Ltd. All rights reserved.

引用

页码：2232 / 2237

页数：6

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