Investigation of Niobium oxynitride thin films deposited by reactive magnetron sputtering

被引:39
|
作者
Fenker, M.
Kappl, H.
Banakh, O.
Martin, N.
Pierson, J. F.
机构
[1] FEM, Dept POT MPh, D-73525 Schwabisch Gmund, Germany
[2] Univ Appl Sci, HEARC Ingn, CH-2400 Le Locle, Switzerland
[3] ENSMM, LMS, F-25030 Besancon, France
[4] Ecole Mines, CNRS, UMR 7570, LSGS, F-54042 Nancy, France
来源
SURFACE & COATINGS TECHNOLOGY | 2006年 / 201卷 / 07期
关键词
Niobium oxynitride; DC and pulsed power magnetron sputtering; PVD; electrical and optical properties;
D O I
10.1016/j.surfcoat.2006.08.104
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Niobium oxynitride films were deposited using reactive magnetron sputtering of a niobium target in an Ar/O-2/N-2 atmosphere with fixed nitrogen flux in direct current (DC) and pulsed modes. For the DC sputtering mode the deposition rate was found to be twice as high as for the pulsed mode at lower oxygen to nitrogen ratios (O/N). Morphology investigation by scanning electron microscopy and atomic force microscopy showed that the coatings are getting very smooth with increasing oxygen content (average roughness R-a < 0.4 mn at oxygen contents > 40 at.%). X-ray diffraction measurements revealed that the niobium oxynitride films are X-ray amorphous for oxygen contents > 40 at.%. The electrical conductivity of the coatings was studied by the 4 point-probe method and was found to decrease with increasing oxygen content. Optical properties of Nb-O-N films were analysed by spectroscopic ellipsometry and transmission spectroscopy. The refractive index of transparent and semi-transparent films was found to be in the range of 2.3 and 2.6 (at 633 nm). The experimental results will be discussed with respect to the O/N ratios (range 1.2 < O/N <infinity) or the oxygen content (range 33.7 at.%< 0 < 67.3 at.%) in the films as measured by Rutherford backscattering spectroscopy and particle induced X-ray emission. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:4152 / 4157
页数:6
相关论文
共 50 条
  • [1] Investigation of zirconium oxynitride thin films deposited by reactive pulsed magnetron sputtering
    Mohamed, S. H.
    El-Rahman, A. M. Abd
    Ahmed, Mahrous R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (22) : 7057 - 7062
  • [2] Adhesion analysis for niobium nitride thin films deposited by reactive magnetron sputtering
    Serdean, Florina Maria
    Merie, Violeta Valentina
    Negrea, Gavril
    Crisan, Horea George
    POWDER METALLURGY AND ADVANCED MATERIALS, 2018, 8 : 212 - 218
  • [3] Optical and mechanical properties of tantalum oxynitride thin films deposited by reactive magnetron sputtering
    Banakh, O.
    Steinmann, P. -A.
    Dumitrescu-Buforn, L.
    THIN SOLID FILMS, 2006, 513 (1-2) : 136 - 141
  • [4] Multiphase Structure Of Tantalum Oxynitride TaOxNy Thin Films Deposited by Reactive Magnetron Sputtering
    Taviot-Gueho, Christine
    Cellier, Joel
    Bousquet, Angelique
    Tomasella, Eric
    JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (41): : 23559 - 23571
  • [5] Synthesis and characterization of tungsten oxynitride films deposited by reactive magnetron sputtering
    Khamseh, S.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 611 : 249 - 252
  • [6] Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering
    Le Paven-Thivet, C.
    Le Gendre, L.
    Le Castrec, J.
    Chevire, F.
    Tessier, F.
    Pinel, J.
    PROGRESS IN SOLID STATE CHEMISTRY, 2007, 35 (2-4) : 299 - 308
  • [8] Ellipsometric Evaluation of the Optical Constants of Zirconium Oxynitride Thin Films Deposited by Reactive Pulsed Magnetron Sputtering
    Tomsah, I. B. I.
    ACTA PHYSICA POLONICA A, 2013, 124 (01) : 141 - 145
  • [9] Z Physical properties of zirconium oxynitride films deposited by reactive magnetron sputtering
    Laurikaitis, M.
    Burinskas, S.
    Dudonis, J.
    Milcius, D.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [10] Properties of zinc oxynitride films deposited by reactive magnetron sputtering at room temperature
    Pau, J. L.
    Hernandez, M. J.
    Cervera, M.
    Ruiz, E.
    Piqueras, J.
    OXIDE-BASED MATERIALS AND DEVICES, 2010, 7603