A Bias-Varied Low-Power K-band VCO in 90 nm CMOS Technology

被引：13

作者：

Liu, Szu-Ling ^{[1
,2
]}

Tian, Xin-Cheng ^{[3
]}

Hao, Yue ^{[3
]}

Chin, Albert ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Xidian Univ, Sch Microelect, Xian, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 06期

关键词：

Bias-varied; k-band; phase noise; switchable active circuit; voltage controlled oscillator (VCO); FLICKER NOISE;

D O I：

10.1109/LMWC.2012.2197817

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a novel bias-varied low-power K-band voltage controlled oscillator (VCO) in a standard 90 nm CMOS technology. This circuit exhibits low power consumption of <= 3mW and a 12.2% tuning range with low phase noise characteristic. These performances are realized by combination of the transformer-feedback and the switchable active circuit block, which can control the dc power at different frequencies and improve the phase noise.

引用

页码：321 / 323

页数：3

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