An analysis of transient thermal properties for high power GaN-based laser diodes

被引：5

作者：

Kim, Jae Min ^{[1
]}

Kim, Seungtaek ^{[1
]}

Kang, Sung Bok ^{[1
]}

Kim, Young Jin ^{[1
]}

Jeong, Hoon ^{[1
]}

Lee, Kyeongkyun ^{[1
]}

Kim, Jongseok ^{[1
]}

Lee, Sangdon ^{[2
]}

Suh, Dongsik ^{[2
]}

Yi, Jeong Hoon ^{[3
]}

Choi, Yoonho ^{[3
]}

Jung, Seok Gu ^{[3
]}

Noh, Minsoo ^{[3
]}

机构：

[1] Korea Inst Ind Technol, 35-3 Hongcheon Ri, Cheonan 331825, Chungnam, South Korea

[2] QSI Co Ltd, Cheonan 330836, Chungnam, South Korea

[3] LG Elect Adv Res Inst, Seoul 137724, South Korea

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; laser; thermal analysis;

D O I：

10.1002/pssc.200983498

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermal properties of 405 nm GaN-based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction-up and junction-down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction-up bonding was similar to 45 C/W which was higher than that of a junction-down bonded laser diode by similar to 10 degrees C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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