Electrical properties and Raman scattering investigation of Ag doped ZnO thin films

被引：55

作者：

Li, W. J. ^{[1
]}

Kong, C. Y. ^{[1
]}

Ruan, H. B. ^{[2
]}

Qin, G. P. ^{[1
,2
]}

Huang, G. J. ^{[1
]}

Yang, T. Y. ^{[1
]}

Liang, W. W. ^{[1
]}

Zhao, Y. H. ^{[1
]}

Meng, X. D. ^{[1
]}

Yu, P. ^{[1
]}

Cui, Y. T. ^{[1
]}

Fang, L. ^{[2
]}

机构：

[1] Chongqing Normal Univ, Opt Engn Lab, Chongqing 400047, Peoples R China

[2] Chongqing Univ, Coll Phys, Chongqing 400030, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2012年 / 152卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Ag-doped ZnO; Raman scattering spectrum; Local vibrational modes (LVMs); p-type; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; P-TYPE ZNO; OPTICAL-PROPERTIES; IMPLANTED ZNO; ZINC-OXIDE;

D O I：

10.1016/j.ssc.2011.10.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm(-1) induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LVMZn-Ag) and Zn sites (LVMAg-O) in ZnO lattice. Moreover, we further studied the effect of donor Ag-O and acceptor Ag-Zn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of Ag-O defects and enhance Ag-Zn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition. Published by Elsevier Ltd

引用

页码：147 / 150

页数：4

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