Physics and performance of phase change memories

被引：12

作者：

Lacaita, AL ^{[1
]}

机构：

[1] Politecn Milan, DEI, I-20133 Milan, Italy

来源：

SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2005年

关键词：

D O I：

10.1109/SISPAD.2005.201524

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Phase change memories (PCM) are considered promising candidates for the replacement of non-volatile Flash technology at the nanoscale. The paper reviews the physics of PCM operation, the scaling potentials of these devices, some options recently proposed for the cell structure, the main challenges for the PCM to become fully competitive with standard Flash technology.

引用

页码：267 / 270

页数：4

共 14 条

[1] Highly manufacturable high density phase change memory of 64Mb and beyond [J].

Ahn, SJ ;

Song, YJ ;

Jeong, CW ;

Shin, JM ;

Fai, Y ;

Hwang, YN ;

Lee, SH ;

Ryoo, KC ;

Lee, SY ;

Park, JH ;

Horii, H ;

Ha, YH ;

Yi, JH ;

Kuh, BJ ;

Koh, GH ;

Jeong, GT ;

Jeong, HS ;

Kim, K ;

Ryu, BI .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :907-910

[2]

BOLIVAR PH, 2004, EPCOS TECH DIG

[3]

Cho SL, 2005, 2005 Symposium on VLSI Technology, Digest of Technical Papers, P96

[4]

HWANG YN, 2003, S VLSI TECHN, P173

[5] Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories [J].

Itri, A ;

Ielmini, D ;

Lacaita, AL ;

Pirovano, A ;

Pellizzer, F ;

Bez, R .

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, :209-215

[6]

LAI S, 2001, IEDM, P803

[7]

LANKHORST M, 2005, NAT MATER, P4

[8]

MIELKE N, 2002, SEM SRC TOP RES C RE

[9] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[10]

Pellizzer F, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P18

← 1 2 →