Ultrahigh-rate plasma jet chemical etching of silicon

被引：29

作者：

Arnold, T ^{[1
]}

Boehm, G ^{[1
]}

Schindler, A ^{[1
]}

机构：

[1] Inst Surface Modificat, Leipzig, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2001年 / 19卷 / 05期

关键词：

D O I：

10.1116/1.1395621

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A very high-rate chemical dry etching technique based on the plasma jet principle is presented. In this system a gas mixture of Ar/SF6/O-2 is fed into the vacuum system through a nozzle. In the vicinity of the nozzle a microwave-excited, plasma jet is formed. Reactive radicals created in the plasma jet flow onto the workpiece surface which is located downstream from the plasma jet. Volume etch rates in the order of 50 mm(3)/min can be achieved. The dependence of the etch rate on the gas mixture and ambient pressure as well as surface temperature has been determined. Reactive species could be identified by means of optical emission spectroscopy. (C) 2001 American Vacuum Society.

引用

页码：2586 / 2589

页数：4