Highly efficient and stable ZnO-based MA-free perovskite solar cells via overcoming interfacial mismatch and deprotonation reaction

被引:42
作者
Liu, Gengling [1 ,2 ]
Zhong, Yang [1 ,2 ]
Mao, Houdong [1 ,2 ]
Yang, Jia [2 ]
Dai, Runying [1 ]
Hu, Xiaotian [2 ]
Xing, Zhi [2 ]
Sheng, Wangping [2 ]
Tan, Licheng [2 ]
Chen, Yiwang [1 ,2 ]
机构
[1] Jiangxi Normal Univ, Minist Educ, Key Lab Funct Small Mol, Inst Adv Sci Res iASR, 99 Ziyang Ave, Nanchang 330022, Jiangxi, Peoples R China
[2] Nanchang Univ, Coll Chem, Inst Polymers & Energy Chem, 999 Xuefu Ave, Nanchang 330031, Jiangxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Zinc oxide; Perovskite solar cells; Deprotonation; Interfacial stability; Lattice strain; ZINC-OXIDE; LAYER; FILMS; AL; PASSIVATION; STABILITY;
D O I
10.1016/j.cej.2021.134235
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Zinc oxide (ZnO) is expected to be the desirable electron transport layer (ETL) for planar perovskite solar cells (PVSCs) because of excellent electron mobility, superior transmittance in the visible spectrum and aligned energy level with perovskite. However, the development of ZnO-based PVSCs is relatively stagnant, mainly due to interfacial mismatch and deprotonation. Herein, aluminium-doped ZnO modified by polydopamine (AZO:PDA) as ETL has firstly been found to optimize interfacial contact and inhibit detrimental interfacial reaction. The surface defects of AZO:PDA has been effectively passivated to mitigate the non-radiative carriers recombination. Moreover, various functional hydroxyl and amino groups from AZO:PDA can not only induce the vertical growth of perovskite grains, but also release the lattice strain and inhibit the deprotonation reaction. Consequently, the rigid device (ITO/AZO:PDA/FA(0.9)Cs(0.1)PbI(3)/Spiro-OMeTAD/Ag) shows a champion power conversion efficiency (PCE) of 21.36% with small hysteresis effect. The unencapsulated devices can preserve 90% and 88% of their initial efficiencies after storing at 85 C for 360 h and continuous light for 500 h, respectively. In addition, a PCE of 18.51% is achieved in flexible device due to the advantages of bendability and interfacial adhesion from AZO: PDA, which is one of the highest PCEs recorded among ZnO-based flexible PVSCs.
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页数:9
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