Cubic boron nitride film residual compressive stress relaxation by post annealing

被引:17
|
作者
Yang, Hangsheng [1 ]
Chen, Aili [1 ]
Qiu, Famin [1 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Cubic boron nitride films; Plasma CVD; Stress relaxation; Post annealing; Adhesion improvement; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SILICON SUBSTRATE; PHASE-STABILITY; HIGH-QUALITY; C-BN; GROWTH; ADHESION; ENERGY; IMPLANTATION;
D O I
10.1016/j.diamond.2011.07.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The authors demonstrate that the residual compressive stress in cubic boron nitride films could be relaxed by 1500 K post annealing in H(2) atmosphere. According to the IR peak shifting, approximately 4.5 GPa stress was relaxed alter 4 hours annealing. Thus film adhesion was improved significantly, cubic boron nitride films with a cubic phase concentration of 90% (vol%) and a thickness of more than 200 nm showed excellent stability and no delaminations were observed even after annealing for over 30 months in the open air, while films without annealing delaminated from substrates within 1 week. Moreover, the relaxation of the compressive stress is accompanied with cubic boron nitride d (111) interplanar distance broadening and corresponding IR peak intensities increasing. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1179 / 1182
页数:4
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