Metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate:: the influence of In composition

被引：4

作者：

Bollaert, S ^{[1
]}

Cordier, Y ^{[1
]}

Happy, H ^{[1
]}

Zaknoune, M ^{[1
]}

Hoel, V ^{[1
]}

Lepilliet, S ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] Inst Elect & Microelect Nord, UMR CNRS 9929, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State of the art metamorphic InxAl1-xAs/InxGa1-x 0.1 mu m gate HEMTs with different Indium compositions x = 0.33, 0.4 and 0.5 have been realized and characterized. A cutoff frequency f(T) = 195 GHz is obtained for an Indium content x = 0.4, which is-close to the value obtained with LM-HEMT on InP realized with the same technological process.

引用

页码：235 / 238

页数：4

共 7 条

[1] Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design [J].

Chertouk, M ;

Heiss, H ;

Xu, D ;

Kraus, S ;

Klein, W ;

Bohm, G ;

Trankle, G ;

Weimann, G .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (06) :273-275

[2] MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate [J].

Cordier, Y ;

Bollaert, S ;

diPersio, J ;

Ferre, D ;

Trudel, S ;

Druelle, Y ;

Cappy, A .

APPLIED SURFACE SCIENCE, 1998, 123 :734-737

[3]

CORDIER Y, IPRM 98 C, P211

[4] Selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid hydrogen peroxide solution [J].

Fourre, H ;

Diette, F ;

Cappy, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (05) :3400-3402

[5]

HAPPY H, IN PRESS IEEE T ELEC

[6] MICROWAVE PERFORMANCE OF 0.4-MU-M GATE METAMORPHIC IN0.29AL0.71AS IN0.3GA0.7AS HEMT ON GAAS SUBSTRATE [J].

WIN, P ;

DRUELLE, Y ;

LEGRY, P ;

LEPILLIET, S ;

CAPPY, A ;

CORDIER, Y ;

FAVRE, J .

ELECTRONICS LETTERS, 1993, 29 (02) :169-170

[7] InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage [J].

Zaknoune, M ;

Bonte, B ;

Gaquiere, C ;

Cordier, Y ;

Druelle, Y ;

Theron, D ;

Crosnier, Y .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) :345-347

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