Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire

被引：21

作者：

Chu, Sheng ^{[1
,2
]}

Morshed, Muhammad ^{[1
,2
]}

Li, Lin ^{[1
,2
]}

Huang, Jian ^{[1
,2
]}

Liu, Jianlin ^{[1
,2
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 325卷 / 01期

关键词：

Molecular beam epitaxy; ZnO; MOLECULAR-BEAM EPITAXY; DONOR; PHOTOLUMINESCENCE; MBE; SUBSTRATE; QUALITY;

D O I：

10.1016/j.jcrysgro.2011.04.036

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO thin films were grown on c-plane sapphire substrate using plasma-assisted molecular beam epitaxy. The thickness of MgO buffer layers was optimized for structural and electrical properties of the epi-ZnO films. It is found that with MgO buffer growth time of 60 s, the epi-ZnO film exhibited narrow X-ray diffraction peak as well as low surface roughness. In the meantime, the electron concentration reached a minimum of 2.03 x 10(16)/cm(3) and high mobility of 169.4 cm(2)/V S. These results demonstrate a route to grow good crystals together with excellent mobility and low residual electron concentration, which can ultimately satisfy the requirement for acceptor doping as well as device engineering. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：36 / 40

页数：5

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