4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

被引：127

作者：

Yasan, A ^{[1
]}

McClintock, R ^{[1
]}

Mayes, K ^{[1
]}

Shiell, D ^{[1
]}

Gautero, L ^{[1
]}

Darvish, SR ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1633019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 muW at an injected current of 435 mA. The measurements were done on arrays of four devices flip chip bonded to AlN submounts for thermal management. (C) 2003 American Institute of Physics.

引用

页码：4701 / 4703

页数：3

共 11 条

[1] Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm [J].

Chitnis, A ;

Sun, J ;

Mandavilli, V ;

Pachipulusu, R ;

Wu, S ;

Gaevski, M ;

Adivarahan, V ;

Zhang, JP ;

Khan, MA ;

Sarua, A ;

Kuball, M .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3491-3493

[2] Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J].

Guo, X ;

Schubert, EF .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4191-4195

[3] III-nitride ultraviolet light-emitting diodes with delta doping [J].

Kim, KH ;

Li, J ;

Jin, SX ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2003, 83 (03) :566-568

[4]

Kipshidze G, 2002, PHYS STATUS SOLIDI A, V192, P286, DOI 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO

[5]

2-2

[6]

MCCLINTOCK R, UNPUB

[7] Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region [J].

Nishida, T ;

Saito, H ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 78 (25) :3927-3928

[8] Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm [J].

Yasan, A ;

McClintock, R ;

Mayes, K ;

Darvish, SR ;

Kung, P ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2002, 81 (05) :801-802

[9] Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire [J].

Yasan, A ;

McClintock, R ;

Mayes, K ;

Darvish, SR ;

Zhang, H ;

Kung, P ;

Razeghi, M ;

Lee, SK ;

Han, JY .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2151-2153

[10]

YASAN A, IN PRESS APPL PHYS L

← 1 2 →