Optimum Thermal Design of High-Voltage Double-Sided Cooled Multi-Chip SiC Power Modules

被引：11

作者：

Catalano, Antonio Pio ^{[1
,2
]}

Scognamillo, Ciro ^{[2
]}

Castellazzi, Alberto ^{[3
]}

d'Alessandro, Vincenzo ^{[1
]}

机构：

[1] Univ Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy

[2] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham, England

[3] Kyoto Univ Adv Sci KUAS, Nagamori Inst Actuators, Kyoto, Japan

来源：

2019 25TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC 2019) | 2019年

关键词：

SIMULATION;

D O I：

10.1109/therminic.2019.8923763

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

This paper focuses on the thermal investigation of SiC-based power modules with the purpose to support their design in terms of cooling techniques and material choices. The analyses are aimed to compare the widespread single-sided cooling technology with an innovative double-sided cooling variant. The comparison is carried out by simulating extremely detailed 3-D FEM structures realized through an in-house routine developed to automatically perform extensive simulation sessions. First, the effects of convective boundary conditions on the thermal resistance and the heat spreading mechanism are thoroughly examined in both technologies; then, the role of ceramic layers composing the power module substrate is evaluated and quantified in terms of thermal performances.

引用

页数：4

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