Ultra-thin CdS for highly performing chalcogenides thin film based solar cells

被引：28

作者：

Sanchez, Y. ^{[1
]}

Espindola-Rodriguez, M. ^{[1
]}

Xie, H. ^{[1
]}

Lopez-Marino, S. ^{[1
]}

Neuschitzer, M. ^{[1
]}

Giraldo, S. ^{[1
]}

Dimitrievska, M. ^{[1
]}

Placidi, M. ^{[1
]}

Izquierdo-Roca, V. ^{[1
]}

Pulgarin-Agudelo, P. A. ^{[2
]}

Vigil-Galan, O. ^{[2
]}

Saucedo, E. ^{[1
]}

机构：

[1] IREC, Jardin Dones Negre 1, Barcelona 08930, Spain

[2] IPN, Escuela Super Fis & Matemat, Mexico City 07738, DF, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 158卷

关键词：

CdS:Cu doping; Cu(ln; Ga)Se-2; Cu2ZnSn(S; Se)(4); Thin film solar cells; MIS structure; HIGH-EFFICIENCY; BUFFER LAYERS; CU(IN; GA)SE-2; DEPOSITION;

D O I：

10.1016/j.solmat.2015.12.037

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ultra-thin CdS layers non intentionally doped and doped with Cu were grown by chemical bath deposition and applied as buffer layers for chalcogenide CuIn1-chi Ga chi Se2 and Cu2ZnSnSe4 (CZTSe) based solar cells. We demonstrate that the use of Cu as dopant allows to reduce the CdS thickness below 30 nm while keeping the same efficiency levels as those obtained with conventional 70 nm in thickness undoped CdS. This is mainly explained by the improved V-oc values when Cu-doped CdS is employed, obtaining voltages among the highest reported values, especially for CZTSe devices. We propose the formation of a metal-insulator-semiconductor (MIS) type device for explaining the observed experimental behavior based in indirect optoelectronic characterization of the layers and devices. This opens the possibility to use ultra-thin buffer layers for high efficiency chalcogenide based solar cells, reducing the environmental impact of the CdS buffer deposition, without detrimental impact on the optoelectronic properties of the devices. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：138 / 146

页数：9

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