Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells

被引：82

作者：

Nihei, M ^{[1
]}

Kondo, D ^{[1
]}

Kawabata, A ^{[1
]}

Sato, S ^{[1
]}

Shioya, H ^{[1
]}

Sakaue, M ^{[1
]}

Iwai, T ^{[1
]}

Ohfuti, M ^{[1
]}

Awano, Y ^{[1
]}

机构：

[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2005年

关键词：

D O I：

10.1109/IITC.2005.1499995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have succeeded in lowering the resistance of multi-walled carbon nanotube (MWNT) vias, using parallel channel conduction of each tube's inner shells. By optimizing the structure of the interface between MATNTs and Ti bottom contact layers, we could obtain a via resistance of 0.7 Omega for a 2-mu m-diameter via consisting of about 1000 MWNTs. The corresponding resistance of about 0.7 M per MWNT indicates that most of the inner shells contribute to carrier conduction as an additional channel. The total resistance of the CNT vias that we fabricated is in the same order of magnitude as the theoretical value of W plugs and one order of magnitude higher than the theoretical value of Cu vias.

引用

页码：234 / 236

页数：3

共 10 条

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