Specific Contact Resistivity Improvement by As Preamorphization Implantation for Ti-Based Ohmic Contacts on n+-Si

被引：7
|
作者：
Mao, Shujuan [1 ,2 ]
Zhao, Chao [1 ,2 ]
Liu, Jinbiao [1 ,2 ]
Wang, Guilei [1 ,2 ]
Li, Menghua [1 ,2 ]
Liu, Yaodong [1 ,2 ]
Luo, Xue [1 ,2 ]
Zhan, Dan [1 ,2 ]
Xu, Jing [1 ,2 ]
Wang, Wenwu [1 ,2 ]
Chen, Dapeng [1 ,2 ]
Li, Junfeng [1 ,2 ]
Ye, Tianchun [1 ,2 ]
Luo, Jun [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 04期
关键词：
As preamorphization implant (PAI); dopant segregation; specific contact resistivity; Ti silicide; DOPANT SEGREGATION; TITANIUM SILICIDE; ULTRATHIN TISIX; SI; GE; TRANSITION; DIFFUSION; GROWTH;
D O I：
10.1109/TED.2020.2975235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As preamorphization implant ( PAI) for Ti-based ohmic contacts on n(+)-Si is explored in this article. With As implantation at 3 keV/5 x 10(13) cm(-2), the specific contact resistivity (rho(c)) of TiSix on 1.4 x 10(20) cm(-3) P-doped (N-d) n(+)-Si is significantly reduced by similar to 33.8%, down to similar to 2.33 x 10(-8)-cm(-2). This rho(c) improvement is a result of manipulation between the reduction of effective Schottky barrier height to electrons (phi(bn,eff)) and the retardation of Ti silicidation, which are both strongly correlated with As segregation. In comparison with the widely adopted Ge PAI, As PAI shows superior performance for nMOS contact engineering, featuring with lower rho(c0) and phi(bn,eff) as well as better thermal stability.
引用
收藏
页码：1726 / 1729
页数：4
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