Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors

被引：15

作者：

Yu, Pengfei ^{[1
,2
]}

Xu, Yadong ^{[2
]}

Chen, Yongren ^{[1
]}

Song, Jie ^{[1
]}

Zhu, Yi ^{[1
]}

Zhang, Meijing ^{[1
]}

Zhang, Binggang ^{[1
]}

Wang, Yu ^{[1
]}

Li, Wei ^{[1
]}

Luan, Lijun ^{[1
]}

Du, Yuanyuan ^{[3
]}

Ma, Jing ^{[1
]}

Zheng, Jiahong ^{[1
]}

Li, Zhuo ^{[1
]}

Bai, Min ^{[1
]}

Li, Hui ^{[1
]}

Jie, Wanqi ^{[2
]}

机构：

[1] Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China

[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Key Lab Particle Astrophys, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2018年 / 483卷

基金：

中国博士后科学基金;

关键词：

Characterization; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials; GROWTH;

D O I：

10.1016/j.jcrysgro.2017.11.012

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Radiation detectors with different thickness are needed to detect gamma rays with various energies. In this paper, a post-growth annealing method was used to improve the properties of CdMnTe: In (CMT: In) crystals with different thickness for gamma-ray detectors. The results indicated that Te inclusions in CMT: In crystals with different thickness were reduced remarkably after annealing. Both the resistivity and IR transmittance of annealed CMT: In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detectors fabricated by annealed CMT: In slices with 1 mm, 2 mm and 5 mm thickness, the energy resolutions were enhanced about 252%, 193% and 141%, respectively. And (mu tau)(e) values were enhanced about 80%, 80% and 76%, respectively. The performance of the detectors was greatly improved after annealing. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：94 / 101

页数：8

共 19 条

[1] Study of Te inclusions in CdMnTe crystals for nuclear detector applications [J].

Babalola, O. S. ;

Bolotnikov, A. E. ;

Groza, M. ;

Hossain, A. ;

Egarievwe, S. ;

James, R. B. ;

Burger, A. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (14) :3702-3707

[2] Tellurium antisites in CdZnTe [J].

Chu, M ;

Terterian, S ;

Ting, D ;

Wang, CC ;

Gurgenian, HK ;

Mesropian, S .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2728-2730

[3] Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique [J].

Du Yuan-yuan ;

Jie Wan-qi ;

Zheng Xin ;

Wang Tao ;

Bai Xu-xu ;

Yu Hui .

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2012, 22 :S143-S147

[4] Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique [J].

Du, Yuanyuan ;

Jie, Wanqi ;

Wang, Tao ;

Zheng, Xin ;

Xu, Yadong ;

Luan, Lijun .

JOURNAL OF CRYSTAL GROWTH, 2012, 355 (01) :33-37

[5] Modified compensation model of CdTe [J].

Fiederle, M ;

Eiche, C ;

Salk, M ;

Schwarz, R ;

Benz, KW ;

Stadler, W ;

Hofmann, DM ;

Meyer, BK .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6689-6692

[6]

Hossain A., 2009, J ELECT MATER, V38

[7]

Jones K. A., 2007, P SOC PHOTO-OPT INS, V6706

[8] Overcoming Zn segregation in CdZnTe with the temperature gradient annealing [J].

Kim, K. ;

Bolotnikov, A. E. ;

Camarda, G. S. ;

Hossain, A. ;

James, R. B. .

JOURNAL OF CRYSTAL GROWTH, 2016, 442 :98-101

[9] Defect levels and thermomigration of Te precipitates in CdZnTe:Pb [J].

Kim, K. H. ;

Gul, R. ;

Carcelen, V. ;

Bolotinkov, A. E. ;

Carmarda, G. S. ;

Yang, G. ;

Hossain, A. ;

Cui, Y. ;

James, R. B. ;

Hong, J. ;

Kim, S. U. .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (06) :781-784

[10] α Particle response of undoped CdMnTe [J].

Parkin, J. ;

Sellin, P. J. ;

Davies, A. W. ;

Lohstroh, A. ;

Ozsan, M. E. ;

Seller, P. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 573 (1-2) :220-223

← 1 2 →