Three dimensional top down metrology: A viable alternative to AFM or cross section?

被引:12
作者
Solecky, E [1 ]
Archie, C [1 ]
Hayes, T [1 ]
Banke, B [1 ]
Cornell, R [1 ]
机构
[1] IBM Adv Semicond Technol Ctr, Hopewell Jct, NY 12533 USA
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷
关键词
critical dimension (CD); scanning electron microscopy (SEM); atomic force microscopy (AFM); sidewall angle;
D O I
10.1117/12.436762
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Automated critical dimension (CD) metrology has long been known to have certain limitations. As a top down imaging technique, retrograde profiles, resist thickness loss and other process issues are difficult to detect with the standard production CD SEMs used throughout the industry. Tilting capability has recently added much needed degrees of freedom to CD SEMs, potentially opening the door to three dimensional metrology. Various methodologies can be used to interpret tilt image information. This paper investigates one particular technique used to extract three dimensional information. Using cross section and/or atomic force microscopy (AFM), one can evaluate the potential benefits and validity of CD SEM tilt capability. Sidewall angle, film thickness and possibly other parameters could possibly become standard calculations the top down CD SEM could perform on a routine basis. Data is reported comparing 3D information generated from top down CD SEM to AFM. Potentially, a couple of different approaches to evaluating 3D information will be compared. Lastly, recommendations for future applications will be discussed.
引用
收藏
页码:366 / 376
页数:11
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