Automated Assembly of Wafer-Scale 2D TMD Heterostructures of Arbitrary Layer Orientation and Stacking Sequence Using Water Dissoluble Salt Substrates

被引:35
作者
Han, Sang Sub [1 ,4 ]
Ko, Tae-Jun [1 ]
Yoo, Changhyeon [1 ]
Shawkat, Mashiyat Sumaiya [1 ,5 ]
Li, Hao [1 ,2 ]
Kim, Bo Kyung [3 ]
Hong, Woong-Ki [3 ]
Bae, Tae-Sung [3 ]
Chung, Hee-Suk [3 ]
Oh, Kyu Hwan [4 ]
Jung, Yeonwoong [1 ,2 ,3 ]
机构
[1] Univ Cent Florida, NanoSci Technol Ctr, Orlando, FL 32826 USA
[2] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32826 USA
[3] Korea Basic Sci Inst, Analyt Res Div, Jeonju 54907, South Korea
[4] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[5] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32826 USA
基金
美国国家科学基金会; 新加坡国家研究基金会;
关键词
2D layer; 2D TMD; 2D heterolayer; vertically aligned layer; assembly; automation; TRANSITION-METAL DICHALCOGENIDES; 2-DIMENSIONAL MATERIALS; MOS2; GROWTH; GRAPHENE; NANOSHEETS; OPTOELECTRONICS; OPPORTUNITIES; CRYSTALS; PTTE2;
D O I
10.1021/acs.nanolett.0c01089
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a novel strategy to assemble wafer-scale two-dimensional (2D) transition metal dichalcogenide (TMD) layers of well-defined components and orientations. We directly grew a variety of 2D TMD layers on "water-dissoluble" single-crystalline salt wafers and precisely delaminated them inside water in a chemically benign manner. This manufacturing strategy enables the automated integration of vertically aligned 2D TMD layers as well as 2D/2D heterolayers of arbitrary stacking orders on exotic substrates insensitive to their kind and shape. Furthermore, the original salt wafers can be recycled for additional growths, confirming high process sustainability and scalability. The generality and versatility of this approach have been demonstrated by developing proof-of-concept "all 2D" devices for diverse yet unconventional applications. This study is believed to shed a light on leveraging opportunities of 2D TMD layers toward achieving large-area mechanically reconfigurable devices of various form factors at the industrially demanded scale.
引用
收藏
页码:3925 / 3934
页数:10
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