Ultralow temperature epitaxial growth of silicon-germanium thin films on Si(001) using GeF4

被引：3

作者：

Tao, Ke ^{[1
]}

Wang, Jin ^{[2
]}

Jia, Rui ^{[1
]}

Sun, Yun ^{[1
]}

Jin, Zhi ^{[1
]}

Liu, Xinyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, 3 Bei Tu Cheng West Rd, Beijing 100029, Peoples R China

[2] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300071, Peoples R China

来源：

基金：

中国国家自然科学基金;

关键词：

Low temperature; Epitaxial growth; Silicon germanium; Dislocation; CHEMICAL-VAPOR-DEPOSITION; LAYERS; QUALITY; SI; SI2H6;

D O I：

10.1016/j.diamond.2016.06.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By designing oxidation-reduction reaction, epitaxial growth of silicon-germanium (Si1-xGex: 0 <= x <= 1) films on Si(001) at low temperature has been achieved using reactive thermal CVD (RTCVD). Si2H6 and GeF4 are used as source gases. The temperature dependence of growth kinetics has been investigated. The results indicate that films grown at high temperature tend to be polycrystalline; on the contrary, a lower temperature promotes the selective growth and surface reaction assists the improvement of the crystal quality. High quality Si1-xGex (x = 0.99) has been prepared directly on Si wafer at 300 degrees C with the RMS roughness of 0.8 nm and threading dislocation density of 2 x 10(7) cm(-2). (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：138 / 142

页数：5

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