On the thermal re-oxidation of silicon oxynitride

被引：0

作者：

Morales-Acevedo, A ^{[1
]}

Pérez-Sánchez, GF ^{[1
]}

机构：

[1] IPN, Ctr Invest & Estudios Avanzados, Dept Elect Engn, Mexico City 07360, DF, Mexico

来源：

FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES | 2004年 / 786卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a two layer model to describe the growth of silicon oxide NOD during the thermal re-oxidation (O-2) of silicon oxynitride (SiOx:N) thin films previously deposited on silicon. Based on this model, the activation energy for the diffusion coefficient of oxygen through the oxynitride layer was determined. The value observed (3.67 eV) is much higher than the activation energy for oxygen diffusion in SiO2 due to the small concentration of nitrogen in the oxynitride film.

引用

页码：251 / 256

页数：6

共 8 条

[1] FURNACE NITRIDATION OF THERMAL SIO2 IN PURE N2O AMBIENT FOR ULSI MOS APPLICATIONS
AHN, J
TING, W
KWONG, DL
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) : 117 - 119
[2] Scaling the gate dielectric: Materials, integration, and reliability
Buchanan, DA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) : 245 - 264
[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[4] Ganem JJ, 1996, APPL PHYS LETT, V68, P2366, DOI 10.1063/1.116135
[5] Hot-carrier-induced degradation of N2O-oxynitrided gate oxide NMOSFET's
Matsuoka, T
Tauchi, S
Ohtsuka, H
Taniguchi, K
Hamaguchi, C
Kakimoto, S
Uda, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1364 - 1373
[6] EVALUATION OF INTERFACIAL NITROGEN CONCENTRATION OF RTP OXYNITRIDES BY REOXIDATION
OKADA, Y
TOBIN, PJ
LAKHOTIA, V
AJURIA, SA
HEGDE, RI
LIAO, JC
RUSHBROOK, PP
ARIAS, LJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (06) : L87 - L89
[7] LIGHTLY NITRIDED GATE OXIDES FOR 0.25 MU-M CMOS
POMP, HG
KUIPER, AET
LIFKA, H
MONTREE, AH
WOERLEE, PH
[J]. MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 85 - 88
[8] NITROGEN DEPLETION DURING OXIDATION IN N2O
SAKS, NS
MA, DI
FOWLER, WB
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (03) : 374 - 376

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