Effects of Ge profiles on base transit time and base resistance of SiGe HBT's

被引：0
|
作者：
Song, J
Yuan, JS
Schwierz, F
Schipanski, D
机构：
来源：
ICECS 96 - PROCEEDINGS OF THE THIRD IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS, VOLS 1 AND 2 | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented.
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页码：876 / 879
页数：4
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