Low temperature growth of carbon nanotubes on Si substrates in high vacuum

被引：37

作者：

Tanioku, Kenji

Maruyama, Takahiro ^{[1
,2
]}

Naritsuka, Shigeya ^{[2
]}

机构：

[1] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, 21st CENTURY COE Program Nano Factory, Nagoya, Aichi 4688502, Japan

来源：

DIAMOND AND RELATED MATERIALS | 2008年 / 17卷 / 4-5期

关键词：

carbon nanotube; gas source; CVD; Raman spectroscopy; SEM;

D O I：

10.1016/j.diamond.2007.10.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nanotube (CNT) growth was carried out on SiO2/Si substrates using an alcohol gas source in a high vacuum without any carbon decomposition processes. In the Raman spectra of the grown CNTs, both the G/Si peak intensity ratio and G/D peak intensity ratio indicated that the optimum growth temperature became lower as the pressure decreased. By reducing the pressure to 1 x 10(-4) Pa, CNTs could be grown at 400 degrees C, and the G/D ratio was about 16, indicating that the quality of the grown CNTs was good, taking into account the low growth pressure. In addition, the Raman spectra in the radial breathing mode (RBM) region showed that the diameter distribution of the grown CNTs was dependent on both the growth pressure and temperature, and the relative intensity of the RBM peaks from small-diameter CNTs increased as the growth pressure and/or temperature was reduced. (C) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：589 / 593

页数：5

相关论文

共 16 条

[1] Self-oriented regular arrays of carbon nanotubes and their field emission properties [J].

Fan, SS ;

Chapline, MG ;

Franklin, NR ;

Tombler, TW ;

Cassell, AM ;

Dai, HJ .

SCIENCE, 1999, 283 (5401) :512-514

[2] Suspended architecture formation process of single-walled carbon nanotubes [J].

Homma, Y ;

Takagi, D ;

Kobayashi, Y .

APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3

[3] HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].

IIJIMA, S .

NATURE, 1991, 354 (6348) :56-58

[4] Behavior of catalytic nanoparticles during chemical vapor deposition for carbon nanotube growth [J].

Jeong, GH ;

Yamazaki, A ;

Suzuki, S ;

Kobayashi, Y ;

Homma, Y .

CHEMICAL PHYSICS LETTERS, 2006, 422 (1-3) :83-88

[5] Effect of nanoparticle density on narrow diameter distribution of carbon nanotubes and particle evolution during chemical vapor deposition growth [J].

Jeong, GH ;

Suzuki, S ;

Kobayashi, Y ;

Yamazaki, A ;

Yoshimura, H ;

Homma, Y .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)

[6] G-band resonant Raman study of 62 isolated single-wall carbon nanotubes -: art. no. 155412 [J].

Jorio, A ;

Souza, AG ;

Dresselhaus, G ;

Dresselhaus, MS ;

Swan, AK ;

Ünlü, MS ;

Goldberg, BB ;

Pimenta, MA ;

Hafner, JH ;

Lieber, CM ;

Saito, R .

PHYSICAL REVIEW B, 2002, 65 (15) :1554121-1554129

[7] Structural (n, m) determination of isolated single-wall carbon nanotubes by resonant Raman scattering [J].

Jorio, A ;

Saito, R ;

Hafner, JH ;

Lieber, CM ;

Hunter, M ;

McClure, T ;

Dresselhaus, G ;

Dresselhaus, MS .

PHYSICAL REVIEW LETTERS, 2001, 86 (06) :1118-1121

[8] Carbon nanotubes in interconnect applications [J].

Kreupl, F ;

Graham, AP ;

Duesberg, GS ;

Steinhögl, W ;

Liebau, M ;

Unger, E ;

Hönlein, W .

MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) :399-408

[9] Optical characterization of single-walled carbon nanotubes synthesized by catalytic decomposition of alcohol [J].

Maruyama, S ;

Miyauchi, Y ;

Murakami, Y ;

Chiashi, S .

NEW JOURNAL OF PHYSICS, 2003, 5 :149.1-149.12

[10] Simultaneous formation of multiwall carbon nanotubes and their end-bonded ohmic contacts to Ti electrodes for future ULSI interconnects [J].

Nihei, M ;

Horibe, M ;

Kawabata, A ;

Awano, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B) :1856-1859