Current Status of Terahertz Integrated Circuits - from Components to Systems

被引:0
作者
Pfeiffer, Ullrich R. [1 ]
Jain, Ritesh [1 ]
Grzyb, Janusz [1 ]
Malz, Stefan [1 ]
Hillger, Phillip [1 ]
Rodriguez-Vazquez, Pedro [1 ]
机构
[1] Univ Wuppertal, Inst High Frequency & Commun Technol, Wuppertal, Germany
来源
2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2018年
关键词
IMAGING APPLICATIONS; ARRAY; POWER; RADAR; SPECTROSCOPY; TRANSCEIVER; RECEIVER; CHIPSET; DIODES; CAMERA;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Despite its several applications, terahertz (THz) radiation has posed a particular challenge for hardware design. Several expensive and bulky laser or III-V semiconductor based solutions have been employed for THz systems. However, over the last decade, there has been a tremendous research into the design of THz integrated circuits in commercial silicon CMOS and SiGe HBT BiCMOS process technologies. Silicon based systems primarily benefit from the mixed signal integration capabilities of the technology, which enable a new set of possibilities and applications in the THz domain. In this paper, we review the current status of THz integrated circuits. We discuss trends in silicon based THz sources and receivers, as well as different THz on-chip systems that have been reported so far for different application areas.
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页码:1 / 7
页数:7
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