1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy

被引：4
作者：
Liu, PW
Liao, GH
Lin, HH
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 03期
关键词：
D O I：
10.1049/el:20040119
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly strained GaAs/GaAS(0.64)Sb(0.36) single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mum pulsed operation with a low threshold current density of 300 A/cm(2). The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
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收藏
页码：177 / 179
页数：3
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