Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures

被引：1

作者：

Ivanov, P. A. ^{[1
]}

Potapov, A. S. ^{[1
]}

Nikolaev, A. E. ^{[1
,2
]}

Lundin, V. V. ^{[1
,2
]}

Sakharov, A. V. ^{[1
,2
]}

Tsatsulnikov, A. F. ^{[1
,2
]}

Afanas'ev, A. V. ^{[3
]}

Romanov, A. A. ^{[3
]}

Osachev, E. V. ^{[3
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg 194021, Russia

[3] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 08期

关键词：

Atomic Layer Deposition; Accumulation Mode; Chemical Vapor Deposition Method; Breakdown Field Strength; High Negative Voltage;

D O I：

10.1134/S1063782615080096

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN metal-insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 x 10(6) V/cm, 7.5, and 3 x 10(12) cm(-2), respectively.

引用

页码：1035 / 1038

页数：4

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