Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

被引:7
作者
Angermann, Heike [1 ]
Gref, Orman [1 ]
Stegemann, Bert [2 ]
机构
[1] Helmholtz Zentrum Berlin, Inst Silizium Photovolta, D-12489 Berlin, Germany
[2] HTW, D-12459 Berlin, Germany
来源
CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2011年 / 9卷 / 06期
关键词
Wet-chemical surfaces pre-treatment; Hydrogen-termination; Silicon; Silicon oxide interface; Surfaces photovoltage; Interface states; ELECTRONIC-PROPERTIES; HYDROGEN TERMINATION; SILICON INTERFACES; THIN-OXIDE; SURFACES; SI; CENTERS; DENSITY; CHARGES; SI/SIO2;
D O I
10.2478/s11534-011-0053-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ultrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).
引用
收藏
页码:1472 / 1481
页数:10
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