All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

被引：183
|
作者：
Kokubun, Yoshihiro [1 ]
Kubo, Shohei [1 ]
Nakagomi, Shinji [1 ]
机构：
[1] Ishinomaki Senshu Univ, Fac Sci & Engn, Dept Informat Technol & Elect, Ishinomaki, Miyagi 9868580, Japan
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 09期
关键词：
SINGLE-CRYSTAL;
D O I：
10.7567/APEX.9.091101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
NiO/beta-Ga2O3 all-oxide p-n heterojunction diodes were fabricated for the first time using p-type NiO epitaxial layers grown on n-type beta-Ga2O3 substrates. The fabricated diodes exhibited good rectifying current-voltage characteristics, with a rectifying ratio greater than 10(8) at +/- 3V. The capacitance-voltage measurements showed that the built-in voltage was 1.4 V. These results were discussed in terms of the energy band diagram of a type-II heterojunction, where the conduction band and valence band discontinuities were estimated to be 2.2 and 3.4 eV, respectively. (C) 2016 The Japan Society of Applied Physics
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页数：3
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