A nodal model dedicated to self-heating and thermal coupling simulations

被引：5

作者：

Beckrich-Ros, Helene ^{[1
]}

Ortolland, Sylvie ^{[1
]}

Pache, Denis ^{[1
]}

Celi, Didier ^{[1
]}

Gloria, Daniel ^{[1
]}

Zimmer, Thomas ^{[2
]}

机构：

[1] STMicroelect, F-38926 Crolles, France

[2] IMS, F-33405 Talence, France

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2008年 / 21卷 / 02期

关键词：

heterojunction bipolar transistors (HBTs) \; nodal model; power bipolar transistors; self-heating; thermal coupling;

D O I：

10.1109/TSM.2008.2000272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Both reduction in device sizes and enhanced increase in current densities lead to concern about the impact of the self-heating effect on device electrical characteristics. Moreover, in power transistors applications, devices are connected in parallel, so thermal interaction between devices also has to be considered. In this paper, a nodal model is proposed in order to take into account temperature variation due to self-heating and thermal coupling. This model associated with the HICUM Level 2 version 2.21 compact model is validated thanks to measurements made on specific test structures.

引用

页码：132 / 139

页数：8

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