Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

被引:26
作者
Chen, KJ [1 ]
Niu, GF
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
关键词
controlled quenching; high electron mobility transistor (HEMT); negative differential resistance (NDR); programmable logic gate; resonant tunneling diode;
D O I
10.1109/JSSC.2002.807403
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The circuit concept of programmable logic gates based on the controlled quenching of series-connected negative differential resistance (NDR) devices is introduced, along with the detailed logic synthesis and circuit modeling. At the rising edge of a clocked, supply voltage, the NDR devices are quenched in the ascending order of peak currents that can be reordered by the control gates and input gates biases, thus, providing programmable logic functions. The simulated results agree well with the experimental demonstration of the programmable logic gate fabricated by a monolithic integrated resonant tunneling diode/high electron mobility transistor technology.
引用
收藏
页码:312 / 318
页数:7
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