Effect of thermal annealing of radiation defects on the noise characteristics of silicon p-n structures with a thin multiplication region

被引：0

作者：

Baranouskii, AK

Kuchinskii, PV

Savenok, ED

机构：

[1] Belarusian State Univ, Minsk 220080, BELARUS

[2] Belarussian Acad Sci, Inst Appl Phys, Minsk 270072, BELARUS

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 01期

关键词：

Radiation; Silicon; Multiplication Region; Charge Carrier; Magnetic Material;

D O I：

10.1134/1.1538538

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Specific features of changes in the noise spectral density and the lifetime of minority charge carriers in Si p-n structures with a thin multiplication region under thermal annealing of radiation defects were studied. It is shown that the change in the frequency characteristics of noise in p-n structures is related to the recovery of surface states. A qualitative explanation of self-limitation of the avalanche process in p-n structures with a thin multiplication region is suggested. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：50 / 52

页数：3

共 9 条

[1] Extension of the frequency range of the noise spectral density in silicon p-n structures irradiated with gamma-ray quanta [J].