5.8-GHz CMOS T/R switches with high and low substrate Resistances in a 0.18-μm CMOS process

被引：54

作者：

Li, ZB ^{[1
]}

Yoon, H ^{[1
]}

Huang, FJ ^{[1
]}

O, KK ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Silicon Microwave Integrated Circuits & Syst Res, Gainesville, FL 32611 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 01期

基金：

美国国家科学基金会;

关键词：

integrated circuits; RF CMOS switch; substrate resistances; T/R switch;

D O I：

10.1109/LMWC.2002.807698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two single-pole, double-throw transmit/receive switches were designed and fabricated with different substrate resistances using a 0.18-mum p(-) substrate CMOS process. The switch With low substrate resistances exhibits 0.8-dB insertion loss and 17-dBm P-1dB at 5.825 GHz, whereas,the switch with high substrate resistances has 1-dB insertion loss and 18-dBm P-1dB. These results suggest that the optimal insertion loss can be achieved with low substrate resistances and 5.8-GHz T/R switches with excellent insertion loss and reasonable power handling capability can be implemented in a 0.18-mum CMOS process.

引用

页码：1 / 3

页数：3

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