Formation of U-shaped diamond trenches with vertical {111} sidewalls by anisotropic etching of diamond (110) surfaces

被引：19

作者：

Nagai, M. ^{[1
]}

Nakamura, Y. ^{[1
]}

Yamada, T. ^{[1
]}

Tabakoya, T. ^{[1
,2
]}

Matsumoto, T. ^{[1
,3
]}

Inokuma, T. ^{[1
]}

Nebel, C. E. ^{[3
,4
]}

Makino, T. ^{[2
]}

Yamasaki, S. ^{[2
,3
]}

Tokuda, N. ^{[1
,2
,3
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] Kanazawa Univ, Nanomat Res Inst, Kanazawa, Ishikawa 9201192, Japan

[4] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

关键词：

Ni; Water vapor; Anisotropy; Vertical wall; U-shaped trench; U-groove; SINGLE-CRYSTAL DIAMOND; SILICON; SI; FABRICATION; KOH; OXIDE;

D O I：

10.1016/j.diamond.2020.107713

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

U-shaped diamond trenches with vertical {111} sidewalls for power devices were successfully obtained by anisotropic etching of diamond (110) surfaces using Ni films in high-temperature (1000 degrees C) water vapor. The etching rate for the diamond (110) surfaces was estimated to be 3.8 mu m/min on the basis of the relationship between etching time and etching depth of diamond trenches with (110) bottoms. These (110) bottoms gradually disappeared as the etching progressed. Finally, they completely vanished and each diamond trench was surrounded by four vertical {111} sidewalls and two slanted {111} sidewalls. The formation mechanisms of the U-shaped diamond trenches are also discussed on the basis of the experimental results.

引用

页数：6

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