Microstructure, domain structures and ferroelectric properties in (Pb0.8,La0.1,Ca0.1)TiO3/Pb(Zr0.2,Ti0.8)O3 bilayered thin film

被引:2
作者
Zhu, Jiliang [2 ]
Zhu, Xiaohong [1 ]
Zeng, Huizhong [3 ]
Jiang, Meng [2 ]
Li, Xuhai [2 ]
Zhu, Jianguo [2 ]
Xiao, Dingquan [2 ]
Li, Yanrong [3 ]
机构
[1] MINATEC, LETI, CEA, F-38054 Grenoble 9, France
[2] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
关键词
PLCT/PZT bilayered thin film; RF magnetron sputtering; Microstructure; Domain structure; Ferroelectric properties; EPITAXIAL BATIO3/SRTIO3 SUPERLATTICES; POLARIZATION; RECONSTRUCTION; ENHANCEMENT; DYNAMICS; PHYSICS;
D O I
10.1016/j.tsf.2009.05.062
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric (Pb-0.8,La-0.1,Ca-0.1)TiO3/Pb(Zr-0.2,Ti-0.8)O-3 (PLCT/PZT) bilayered thin film was prepared on Pt(111)/Ti/SiO2/Si(100) substrate by RF magnetron sputtering technique. Pure perovskite crystalline phase, determined by X-ray diffraction, was formed in the PLCT/PZT bilayer. The bilayered film exhibited a very dense and smooth surface morphology with a uniform grain size distribution. The ferroelectric domain structures were investigated by a combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM. respectively). It is demonstrated by both VPFM and LPFM observations that out-of-plane and in-plane lamellar ferroelectric domains coexist in the bilayered thin film. The PLCT/PZT bilayered film possesses good ferroelectric properties with relatively high spontaneous polarization (2P(s), = 82 mu C/cm(2)) and remnant polarization (2P(s), = 26.2 mu C/cm(2)). (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:392 / 395
页数:4
相关论文
共 33 条
[1]   Mapping the domain distribution at ferroelectric surfaces by scanning force microscopy [J].
Abplanalp, M ;
Eng, LM ;
Gunter, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S231-S234
[2]   Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films [J].
Auciello, O ;
Gruverman, A ;
Tokumoto, H ;
Prakash, SA ;
Aggarwal, S ;
Ramesh, R .
MRS BULLETIN, 1998, 23 (01) :33-42
[3]   Epitaxially strained [001]-(PbTiO3)1(PbZrO3)1 superlattice and PbTiO3 from first principles -: art. no. 184101 [J].
Bungaro, C ;
Rabe, KM .
PHYSICAL REVIEW B, 2004, 69 (18) :184101-1
[4]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130
[5]   Nanoscale reconstruction of surface crystallography from three-dimensional polarization distribution in ferroelectric barium-titanate ceramics [J].
Eng, LM ;
Güntherodt, HJ ;
Schneider, GA ;
Köpke, U ;
Saldaña, JM .
APPLIED PHYSICS LETTERS, 1999, 74 (02) :233-235
[6]   Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film:: Influence of the sol-gel process and the substrate [J].
Floquet, N ;
Hector, J ;
Gaucher, P .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3815-3826
[7]   Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy [J].
Franke, K ;
Weihnacht, M .
SURFACE SCIENCE, 2005, 585 (03) :144-154
[8]   Dynamics of nanoscale polarization backswitching in tetragonal lead zirconate titanate thin film [J].
Fu, DS ;
Suzuki, K ;
Kato, K ;
Suzuki, H .
APPLIED PHYSICS LETTERS, 2003, 82 (13) :2130-2132
[9]   Nanoscale imaging of domain dynamics and retention in ferroelectric thin films [J].
Gruverman, A ;
Tokumoto, H ;
Prakash, AS ;
Aggarwal, S ;
Yang, B ;
Wuttig, M ;
Ramesh, R ;
Auciello, O ;
Venkatesan, T .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3492-3494
[10]   Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy [J].
Gruverman, A ;
Kholkin, A ;
Kingon, A ;
Tokumoto, H .
APPLIED PHYSICS LETTERS, 2001, 78 (18) :2751-2753