Nanoindentation analysis of Al:ZnO epitaxial whiskers

被引:26
作者
Saitoh, H [1 ]
Namioka, Y [1 ]
Sugata, H [1 ]
Ohshio, S [1 ]
机构
[1] Nagaoka Univ Technol, Dept Chem, Niigata 9402188, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 10期
关键词
epitaxy; orientation; whisker; ZnO; sapphire; CVD; SEM; X-ray diffraction; nanoindentation;
D O I
10.1143/JJAP.40.6024
中图分类号
O59 [应用物理学];
学科分类号
摘要
An aggregation of well-organized ZnO whiskers epitaxially grown using a chemical-vapor deposition technique is one of the particularly simple and elegant examples of spontaneous pattern formation. In this study, we analyzed the breaking process of the epitaxial whiskers with and without Al doping using the nanoindentation technique. The whisker diameter and the number density of the whiskers were unchanged with increasing amounts of Al doped into the matrix, The relationship between the breaking load and the length of the whiskers follows Euler's equation, suggesting that the whiskers are destroyed through the bucking process. The degree of elastic deformation is higher for samples including 0.4 and 0.8 at.% Al and lower for those including 1.7 and 2.0 at.% Al than that for nondoped ZnO whiskers. This tendency is also found for the change in the critical load of whisker breaking.
引用
收藏
页码:6024 / 6028
页数:5
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