Synthesis of graphene on porous silicon for vapor organic sensor by using photoluminescence

In this work, ultra-sensors of chemical solvents vapor were fabricated for chloroform, n-Hexane and Ethanol via modified porous silicon (PS) surface by the reduction of graphene oxide (rGO) layer. The rGO was conducted by electrochemical exfoliation of graphite electrodes with electrolyte solution at PH = 4.6. Then porous silicon (PS) was prepared by employing electrochemical etching (ECE) method using silicon (Si) p-type at different etching current density J = 2, 4 and 6 mA/cm(2) with constant HF concentration of 15%, and time of etching of 15 min. The reduction graphene oxide competition with PS was studied as vapors organic sensor, morphological, structural, and surface bond configuration were characterized by Atomic Force Microscopic (AFM), X-ray diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR) respectively, then the Photoluminescence (PL) quenching was measured by using sensor test system with three types of organic chemical solvents n-Hexane, chloroform and ethanol with nitrogen gas mixing, where they were prepared for testing humidity sensor towards the different organic solvents. The results revealed that the reduction graphene oxide layer on surface of PS lead to intensity increase of the PL, and modified the quality of PS sensor for chemical vapor.