Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots

被引：19
|
作者：
Moskalenko, ES
Karlsson, FK
Donchev, VT
Holtz, PO [1 ]
Monemar, B
Schoenfeld, WV
Petroff, PM
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
NANO LETTERS | 2005年 / 5卷 / 11期
关键词：
D O I：
10.1021/nl050926a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains.
引用
收藏
页码：2117 / 2122
页数：6
相关论文
共 50 条
  • [1] Intersublevel emission in InAs/GaAs quantum dots
    Sauvage, S
    Boucaud, P
    Brunhes, T
    Lemaître, A
    Gérard, JM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 579 - 583
  • [2] Carrier emission processes in InAs quantum dots
    Kapteyn, CMA
    Lion, M
    Heinrichdorff, F
    Heitz, R
    Grundmann, M
    Bimberg, D
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 388 - 392
  • [3] InAs/GaAs quantum dots for THz generation
    Daghestani, N. S.
    Cataluna, M. A.
    Berry, G.
    Ross, G.
    Rose, M. J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02): : 222 - 225
  • [4] Hot carrier relaxation in InAs/GaAs quantum dots
    Photonic Mat. and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241, United States
    不详
    不详
    Phys E, 1-4 (578-582):
  • [5] Carrier capture dynamics of InAs/GaAs quantum dots
    Piwonski, T.
    O'Driscoll, I.
    Houlihan, J.
    Huyet, G.
    Manning, R. J.
    Uskov, A. V.
    APPLIED PHYSICS LETTERS, 2007, 90 (12)
  • [6] Hot carrier relaxation in InAs/GaAs quantum dots
    Heitz, R
    Veit, M
    Kalburge, A
    Xie, Q
    Grundmann, M
    Chen, P
    Ledentsov, NN
    Hoffmann, A
    Madhukar, A
    Bimberg, D
    Ustinov, VM
    Kop'ev, PS
    Alferov, ZI
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1998, 2 (1-4): : 578 - 582
  • [7] Carrier dynamics in small InAs/GaAs quantum dots
    Zurauskiene, N
    Marcinkevicius, S
    Janssen, G
    Goovaerts, E
    Bouwen, A
    Koenraad, PM
    Wolter, JH
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001, 2002, 384-3 : 31 - 34
  • [8] Hot carrier relaxation in InAs/GaAs quantum dots
    Heitz, R.
    Mukhametzanov, I.
    Born, H.
    Grundmann, M.
    Hoffmann, A.
    Madhukar, A.
    Bimberg, D.
    Physica B: Condensed Matter, 1999, 272 (01): : 8 - 11
  • [9] Hot carrier relaxation in InAs/GaAs quantum dots
    Heitz, R
    Mukhametzanov, I
    Born, H
    Grundmann, M
    Hoffmann, A
    Madhukar, A
    Bimberg, D
    PHYSICA B-CONDENSED MATTER, 1999, 272 (1-4) : 8 - 11
  • [10] Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots
    Yang, WD
    LoweWebb, RR
    Lee, H
    Sercel, PC
    PHYSICAL REVIEW B, 1997, 56 (20): : 13314 - 13320
12345