Superfluidity of thin He-4 films on atomically flat substrates

被引：3
|
作者：
Ray, R
Nycki, J
Sheshin, GA
Cowan, B
Saunders, J
机构：
[1] SLOVAK ACAD SCI,INST EXPT PHYS,KOSICE 04353,SLOVAKIA
[2] BI VERKIN INST LOW TEMP PHYS & ENGN,KHARKOV,UKRAINE
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷
关键词：
D O I：
10.1007/BF02569629
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The superfluid transition of thin films of He-4 adsorbed on graphite, plated with a bilayer or a trilayer of HD in order to modify the strength of the binding potential, has been studied using a torsional oscillator, The evolution of superfluidity with growth of the film shows considerable structure, The onset coverage for superfluidity is reduced by around 2.5 nm(-2) for the trilayer relative to bilayer preplating. Comparison is made with the results for bare graphite.
引用
收藏
页码：427 / 428
页数：2
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