High saturation power and high gain integrated photoreceivers

被引：22

作者：

Tauke-Pedretti, A ^{[1
]}

Dummer, M

Barton, JS

Sysak, MN

Raring, JW

Coldren, LA

机构：

[1] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 10期

关键词：

offset quantum well; optical receivers; saturation power; semiconductor optical amplifiers (SOAs); waveguide photodiodes; wavelength conversion;

D O I：

10.1109/LPT.2005.854422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel monolithically integrated semiconductor optical amplifier (SOA) receiver is presented. This receiver implements a flared SOA and tapered quantum-well detector. SOAs exhibited 22-dB unsaturated gain and 15.7-dBm output power at the 1-dB gain compression point while the receiver demonstrated 15-GHz bandwidth and -10.5-dBm sensitivity.

引用

页码：2167 / 2169

页数：3

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